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DATA SHEET
BLF245B VHF push-pull power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. The mounting flange provides the common source connection for the transistors. PINNING - SOT279 PIN 1 2 3 4 5 DESCRIPTION gate 1 drain 1 gate 2 drain 2 source
Top view
fpage
BLF245B
PIN CONFIGURATION
1
4
g2
d2 s d1
MSB018 MBB157
5 2 3
g1
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 30 GP (dB) > 14 D (%) > 55
September 1992
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDITIONS - - - up to Tmb = 25 C; total device; - both sections equally loaded -65 - MIN.
BLF245B
MAX. 65 20 4.5 75 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS total device; both sections equally loaded total device; both sections equally loaded THERMAL RESISTANCE 2.3 K/W 0.3 K/W
102 handbook, halfpage ID (A)
MRA922
MRA929
120 handbook, halfpage Ptot (W)
(2)
10
80
(1) (1) (2)
1
40
10-1 1
10
VDS (V)
102
0 0 40 80 120 Th (oC) 160
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS (per section) Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 5 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 5 mA; VDS = 10 V ID = 0.75 A; VDS = 10 V ID = 0.75 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 600 - - - - -
BLF245B
TYP. MAX. - - - - 850 0.8 5 60 40 4.5 - 1 1 4.5 - 1.5 - - - -
UNIT V mA A V mS A pF pF pF
MGP180
handbook, halfpage
2
handbook, halfpage
6
MGP181
T.C. (mV/K) 0
ID (A) 4
Tj = 25 C
125 C
-2
-4 2 -6
-8 1 10
0 102 ID (mA) 103 0 4 8 12 VGS (V) 16
VDS = 10 V.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
September 1992
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
handbook, halfpage
2
MGP182
handbook, halfpage
160
MGP183
RDS(on) ()
C (pF) 120
1
80 Cis Cos 40
0 0 40 80 120 Tj (C) 160
0 0 10 20 30 VDS (V) 40
ID = 0.75 A; VGS = 10 V
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
handbook, halfpage
20
MGP184
Crs (pF)
10
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values per section.
September 1992
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in a push-pull, common source, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 IDQ (mA) 2 x 25 PL (W) 30 GP (dB) > 14 typ. 18
BLF245B
D (%) > 55 typ. 65
Ruggedness in class-B operation The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VDS = 28 V, f = 175 MHz at rated output power.
handbook, halfpage
20
MGP185
Gp (dB) 15
Gp
80 D 60
handbook, halfpage
40
MGP186
PL (W) 30
D 10 40 20
5
20
10
0 0 10 20 30 PL (W) 40
0
0 0 0.5 1.0 1.5 PIN (W) 2.0
Class-B operation; VDS = 28 V; IDQ = 2 x 25 mA; ZL = 8.8 + j12.7 ; f = 175 MHz.
Class-B operation; VDS = 28 V; IDQ = 2 x 25 mA; ZL = 8.8 + j12.7 ; f = 175 MHz.
Fig.9
Power gain and efficiency as functions of output power, typical values.
Fig.10 Load power as a function of input power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
handbook, full pagewidth
BLF245B
R3 +VG
R5
+VD C11 C12
C13 C7
C8
L10 C14 R7 C15
R1 D.U.T. L1 C1 L4 L6 L8 L12 L14 L16 L18 C25 L20
50 input
L2 C2 L3
C3
C4
C5
C6
C27
C21
C22
C23
C24 C26
L21
50 output
L5
L7
L9
L13
L17 L15
L19
L22
R2
C16
C17 R8 C10 L11 C9 C18
C19
C20 +VG R6 +VD
MGP187
f = 175 MHz.
R4
Fig.11 Test circuit for class-B operation.
List of components (see test circuit) COMPONENT C1, C2 C3 C4 C5, C25, C26 C6, C22, C24 C7, C9, C12, C14, C17, C19 September 1992 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor VALUE 270 pF 24 pF 4 to 60 pF 91 pF 5 to 60 pF 100 nF 2222 809 08003 2222 852 47104 2222 809 08002 DIMENSIONS CATALOGUE NO.
7
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
COMPONENT C8, C10 C11, C20 C13, C18 C15, C16 C21, C27 C23 L1, L3, L20, L22 L2, L21 L4, L5 L6, L7 L8, L9 L10, L11 L12, L13 L14, L15
DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) stripline (note 2) semi-rigid cable stripline (note 2) stripline (note 2) stripline (note 2) grade 3B Ferroxcube RF choke stripline (note 2) 4 turns enamelled 1 mm copper wire stripline (note 2) stripline (note 2) 0.4 W metal film resistor 10 turns potentiometer 0.4 W metal film resistor 0.4 W metal film resistor
VALUE 680 pF 10 nF 10 F, 63 V 100 pF 75 pF 36 pF 55 50 49.5 49.5 49.5
DIMENSIONS
CATALOGUE NO.
2222 852 47103
length 111 mm width 2.5 mm length 111 mm ext. dia. 2.2 mm length 28 mm width 3 mm length 22.5 mm width 3 mm length 4.5 mm width 3 mm 4312 020 36642 length 21 mm width 3 mm length 9 mm int. dia. 6 mm leads 2 x 5 mm length 30 mm width 3 mm length 26 mm width 3 mm
49.5 70 nH
L16, L17 L18, L19 R1, R2 R3, R4 R5, R6 R7, R8 Notes
49.5 49.5 10 50 205 k 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (r = 4.5), thickness 116 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side of the board are connected together by means of copper straps and hollow rivets.
September 1992
8
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
+VG
handbook, full pagewidth
+VD C11 C12 L20
L1 + L2
L10 C15 C14 C7 C8 R1 L8 L9 L13 L14 L16 L12 C21 C22 L17 L15 C16 C17 L11 R8 R7
C13
C1
C3 L4 L5 C4
C5
C2
L6 C27 L7 C6 R2 C10 C9
C25 C23 L18 L19 C24 C26
L21 + L22 C18
L3 +VG +VD
C19
C20
MBA378
handbook, full pagewidth
200 mm
rivet copper strap copper strap rivet copper strap copper strap copper strap copper strap
rivet
copper strap rivet copper strap 110 mm
rivet
rivet
MBA377
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets.
Fig.12 Component layout for 175 MHz test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
handbook, halfpage
10
MGP188
handbook, halfpage
30
MGP189
Zi () 5 ri
ZL () 20
0 XL xi -5 10 RL
-10
0 0 100 200 300 f (MHz) 400 0 100 200 300 f (MHz) 400
Class-B operation; VDS = 28 V; IDQ = 2 x 25 mA; RGS = 10 ; PL = 30 W (total device).
Class-B operation; VDS = 28 V; IDQ = 2 x 25 mA; RGS = 10 ; PL = 30 W (total device).
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
25 Gp 20
MGP190
(dB)
15
handbook, halfpage
10
5 Zi ZL
MBA379
0 0 100 200 300 f (MHz) 400
Class-B operation; VDS = 28 V; IDQ = 2 x 25 mA; RGS = 10 ; PL = 30 W (total device).
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency, typical values per section.
September 1992
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF245B
SOT279A
D
A F
5
U1 q H1 w2 M C C
B
c
1
4
H
U2
E
A
2
b e
3
w3 M
p
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.84 6.01 0.269 0.237 b 1.66 1.39 c 0.16 0.10 D 9.28 9.01 0.365 0.355 E 5.97 5.71 0.235 0.225 e 3.05 0.12 F 3.05 2.54 0.120 0.100 H 12.96 11.93 0.51 0.47 H1 4.96 4.19 p 3.48 3.22 Q 4.35 4.03 q 18.42 U1 24.90 24.63 0.98 0.97 U2 5.97 5.71 0.235 0.225 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
0.065 0.006 0.055 0.004
0.195 0.137 0.165 0.127
0.171 0.725 0.159
OUTLINE VERSION SOT279A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF245B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
12

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